diffusioncoefficientinsilicon

The longitudinal diffusion coefficient of electrons in silicon is (i) calculated as a function of electric field strength from noise and current measurements on ...

由 T Isobe 著作 · 1989 · 被引用 58 次 — Abstract. The in-depth profiles of iron in silicon diffused with iron at 800, 900, 1000 and 1070°C were investigated by DLTS measurements. The diffusion ...

由 SW Jones 著作 · 2008 · 被引用 170 次 — The third factor in redistribution is the moving oxide-silicon interface. Even if an impurity has a segregation coefficient of 1, the increase ...

由 FJ BRADSHAW 著作 · 1953 · 被引用 13 次 — The diffusion coefficient of silicon was obtained by applying Fick's law and the result (mean of five determinations) was Dγ = 1.1 × 10−7 cm.2/sec. The grain- ...

Basic Properties ; Mobility holes, ≤450 cm2 V-1s ; Diffusion coefficient electrons, ≤36 cm2/s ; Diffusion coefficient holes, ≤12 cm2/s ; Electron thermal ...

由 A Paccagnella 著作 · 1985 · 被引用 35 次 — The data in the temperature range 475–550 °C can be interpreted using the diffusion coefficient D = 8.3 × 10 -3 exp (- 0.81 eV kT ) cm 2 s -1 These values are ...

由 GL Vick 著作 · 1969 · 被引用 277 次 — ABSTRACT. The solid solubility and diffusion coefficients of boron in silicon have been determined as a function of temperature over the range of 700~176.

由 M Ogino 著作 · 1982 · 被引用 107 次 — The germanium diffusion coefficients in Si and SiO, are measured as D = 7.55 x lo3 exp (-5.08 eV/kT) cmz/s and D = 8.9 x exp (-3.9 eV/kT) cm2/s, respectively.